Priority Programme “Nitrides4Future – Novel Materials and Device Concepts” (SPP 2477)
In March 2024, the Senate of the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) established the Priority Programme “Nitrides4Future – Novel Materials and Device Concepts” (SPP 2477). The programme is designed to run for six years. The present call invites proposals for the first three-year funding period.
Semiconductors are the backbone of modern microelectronics – a key technology for innovation. Gallium nitride technology is increasingly developing into the second pillar of microelectronics, besides silicon CMOS technology.
The high potential of nitride semiconductors stems from the extraordinarily broad spectrum of fundamental material properties. Recent discoveries such as the enhanced piezoelectricity and ferroelectricity or impurity-free doping of AlN-based compounds suggest that much of the potential of nitrides for semiconductor technology is yet to be explored. At the same time, the comparatively mature AlInGaN and GaN/AlN technology provides a technological platform that greatly enhances the application prospects of novel materials and novel concepts in devices.
Objectives and Scope
This Priority Programme focuses on fundamental but application-oriented research on emerging nitride semiconductors alongside device architectures enabled by them. Novel nitride materials investigated in this programme should introduce functionalities beyond those of conventional III-N semiconductors, which in turn should enable novel or dramatically improved device functionalities. Novel nitrides investigated in this programme are required to be promising for integration with AlInGaN and GaN/AlN as the fundamental technology platform.
The enhancement of piezoelectric, ferroelectric and optical coefficients beyond those of AlN plays a central role, for which AlMeN compounds with Me = Sc, Cr, Y, Zr, Mo, La, Hf or Yb are promising candidates. For improving the optical, thermal or electrical properties of functional elements in nitride semiconductor devices, graded alloys or porosity bear a large potential.
Research on conventional devices based on GaN/InGaN/AlGaN/AlN without the integration of any novel functionalities, as well as research exclusively focused on simulation methodology, are not with-in the scope of this programme. Research on 2D materials is not intended.
While the state of the art requires substantial materials development accompanied by advanced characterisation throughout the first three-year funding period, research on device concepts specific to novel or enhanced functionalities is also intended from the start. Projects are expected to contribute to the outlined objectives, while linking areas such as theory and experiment or materials and devices.
Synthesis and Properties of Nitride Semiconductors with Novel or Enhanced Functionalities
A fundamental research topic are the stability criteria and formation energies for the wurtzite and rocksalt structures of III-MeN, the maximum Me content up to which the wurtzite structure is retained, as well as functional and mechanical properties of these materials. It needs to be clarified for which materials the enhanced and additional functionalities are most pronounced at Me contents that can experimentally be realised. Groups conducting theoretical research that directly supports experimental work are invited to submit proposals jointly with an experimentalist. Innovative approaches for the synthesis of AlMeN crystals and thin films of high structural quality are encouraged, in order to realise AlMeN with high Me contents. To enable the determination of functional and structural properties as well as to identify suitable synthesis conditions, experimentalists focused on synthesis should aim for close collaboration with researchers focusing on characterisation, theory or both.
Evaluating the potential and limitations of novel materials involves advanced analysis with high spatial resolution that yields information on composition, phase transitions to non-piezoelectric crystal structures, band gaps and defects. This may include advancing characterisation methods beyond the state of the art to meet requirements in terms of e.g. resolution, cross-correlation and data evaluation. The direct correlation of synthesis conditions, composition, structural and functional properties is essential, as is the combination of theory and experiment.
Device Physics and Technology
Since the unique feature of nitrides is that they offer photonic, electronic, piezoelectric, ferroelectric and electro-optical properties within one class of materials, research on device concepts is expected to exploit these combinations. Those combinations of properties that are not available in any other class of materials are of particular interest. The goal is innovation in fields such as neuromorphic computing, quantum technologies, energy storage or energy efficiency. The projects should envision either substantial improvements of performance or novel functionalities all together. Novel approaches for electronic and optical control are supported, such as polarisation-induced doping, porous III-nitrides or interband charge tunnelling. Aspects related to the integration of novel functionalities and concepts with III-N technology are within the scope of the programme. Research targeting active light emitters, however, is not intended to be part of this programme.
Theoretical studies shall be applied to identify and conceptualise promising devices and technologies utilising novel III-MeN compounds. Experimental device research in the first three-year funding period is intended to aim for initial proof of superior performance or proof of concept. The direct combination of device characterisation with theory and simulation should enable quantitative modelling of the device operation and extracting relevant figures of merit, as well as the identification of critical aspects in the real structure of the devices.
A workshop for all potential applicants will be held on 24–25 September 2024 in order to discuss details of the research concept of the programme and the focal topics and to facilitate the formation of joint projects for this Priority Programme. The meeting will be held in Erlangen. Researchers who are interested in this preparatory meeting should contact the coordinator of the Priority Programme for further information. Registration deadline for the workshop is 30 August 2024.
Proposals must be written in English and submitted to the DFG by 4 December 2024. Please note that proposals can only be submitted via elan, the DFG’s electronic proposal processing system.
Applicants must be registered in elan prior to submitting a proposal to the DFG. If you have not yet registered, please note that you must do so by 22 November 2024 to submit a proposal under this call; registration requests received after this time cannot be considered. You will normally receive confirmation of your registration by the next working day. Note that you will be asked to select the appropriate Priority Programme call during both the registration and the proposal process. To enter a project, go to Proposal Submission – New Project/Draft Proposal – Priority Programmes and select “SPP 2477” from the current list of calls.
When preparing your proposal, please review the programme guidelines (DFG form 50.05, section B) and follow the proposal preparation instructions (DFG form 54.01). These forms can either be downloaded from our website or accessed through the elan portal.
The review colloquium for the Priority Programme is planned to be held within the 2nd quarter of 2025.
The DFG strongly welcomes proposals from researchers of all genders and sexual identities, from different ethnic, cultural, religious, ideological or social backgrounds, from different career stages, types of universities and research institutions, and with disabilities or chronic illness. With regard to the subject-specific focus of this call, the DFG encourages female researchers in particular to submit proposals.
Further Information
The elan system can be accessed at https://elan.dfg.de/e.
DFG forms 50.05 and 54.01 can be downloaded at:
For scientific enquiries please contact the Priority Programme coordinator:
Dr.-Ing. Saskia Schimmel, Friedrich-Alexander-Universität Erlangen-Nürnberg, Department Elektrotechnik-Elektronik-Informationstechnik, Lehrstuhl für Elektronische Bauelemente, Cauerstraße 6, 91058 Erlangen, phone +49 9131 8528535, saskia.schimmel@fau.d
Questions on the DFG proposal process can be directed to:
- Programme contact: Dr. Ina Strauß, phone +49 228 885-2523, ina.strauss@dfg.d
- Administrative contact: Malwina Momot, phone +49 228 885-2296, malwina.momot@dfg.d